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| Silicon MOS FETs (Small Signal) 2SK620 Silicon N-Channel MOS FET For switching 2.8 -0.3 +0.2 unit: mm 0.650.15 s Features q High-speed switching q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 0.650.15 1.5 -0.05 +0.25 0.95 2.9 -0.05 1 1.90.2 +0.2 0.95 3 0.4 -0.05 +0.1 2 1.45 +0.2 1.1 -0.1 s Absolute Maximum Ratings (Ta = 25C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg Ratings 50 8 100 200 150 150 -55 to +150 Unit V V mA mA mW C C 1: Gate 2: Source 3: Drain JEDEC: TO-236 EIAJ: SC-59 Mini Type Package (3-pin) Marking Symbol: 3N Internal Connection D G 0 to 0.1 0.1 to 0.3 0.40.2 0.8 S s Electrical Characteristics (Ta = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Input capacitance (Common Source) Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Turn-on time Turn-off time * Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | Ciss Coss Crss ton* toff* Conditions VDS = 10V, VGS = 0 VGS = 8V, VDS = 0 ID = 100A, VGS = 0 ID = 100A, VDS = VGS ID = 20mA, VGS = 5V ID = 20mA, VDS = 5V, f = 1kHz VDS = 5V, VGS = 0, f = 1MHz VDD = 5V, VGS = 0 to 5V, RL = 200 VDD = 5V, VGS = 5 to 0V, RL = 200 min typ max 10 50 3.5 50 50 1.5 20 30 15 5 1 10 20 ton, toff measurement circuit Vout 200 Vin VDD = 5V Vout 10% 10% 90% ton toff 90% 50 100F VGS = 5V 0.16 -0.06 +0.1 Unit A nA V V mS pF pF pF ns ns 1 Silicon MOS FETs (Small Signal) PD Ta 240 120 2SK620 ID VDS 60 | Yfs | VGS Forward transfer admittance |Yfs| (mS) Ta=25C VDS=5V Ta=25C 50 Allowable power dissipation PD (mW) 200 100 Drain current ID (mA) VGS=6.0V 80 5.5V 5.0V 60 160 40 120 4.5V 30 80 40 4.0V 3.5V 3.0V 2.5V 0 2 4 6 8 10 12 20 40 20 10 0 0 20 40 60 80 100 120 140 160 0 0 0 2 4 6 8 10 12 Ambient temperature Ta (C) Drain to source voltage VDS (V) Gate to source voltage VGS (V) Ciss, Coss, Crss VDS Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 12 VGS=0 f=1MHz Ta=25C 120 ID VGS Drain to source ON-resistance RDS(on) () 120 VDS=5V Ta=25C 100 RDS(on) VGS ID=20mA 100 10 Ciss 8 Drain current ID (mA) 80 Ta=-25C 25C 80 6 60 75C 60 Ta=75C 25C -25C 4 Coss 2 Crss 1 3 10 30 100 40 40 20 20 0 0 0 2 4 6 8 10 12 0 0 2 4 6 8 10 12 Drain to source voltage VDS (V) Gate to source voltage VGS (V) Gate to source voltage VGS (V) VIN IO 100 30 VO=5V Ta=25C Input voltage VIN (V) 10 3 1 0.3 0.1 0.03 0.01 0.1 0.3 1 3 10 30 100 Output current IO (mA) 2 |
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